Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

W. Lei; C. Notthoff; A. Lorke; D. Reuter; A. D. Wieck

doi:10.1063/1.3293445

Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

W. Lei^*, C. Notthoff, A. Lorke, D. Reuter, A. D. Wieck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l=0 into l=-1, and a ground state transition from l=-1 into l=-2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.

Original language	English
Article number	033111
Journal	Applied Physics Letters
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.3293445
Publication status	Published - 2010

Access to Document

10.1063/1.3293445

Cite this

@article{715648801dc1414ba834a696e9ef67b0,

title = "Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy",

abstract = "Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l=0 into l=-1, and a ground state transition from l=-1 into l=-2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.",

author = "W. Lei and C. Notthoff and A. Lorke and D. Reuter and Wieck, {A. D.}",

year = "2010",

doi = "10.1063/1.3293445",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

AU - Lei, W.

AU - Notthoff, C.

AU - Lorke, A.

AU - Reuter, D.

AU - Wieck, A. D.

PY - 2010

Y1 - 2010

N2 - Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l=0 into l=-1, and a ground state transition from l=-1 into l=-2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.

AB - Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l=0 into l=-1, and a ground state transition from l=-1 into l=-2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.

UR - http://www.scopus.com/inward/record.url?scp=77949817838&partnerID=8YFLogxK

U2 - 10.1063/1.3293445

DO - 10.1063/1.3293445

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033111

ER -

Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this