Abstract
The negatively charged silicon-vacancy (SiVâ) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a âŒ
Original language | English |
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Article number | 235101 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 89 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2 Jun 2014 |