Elimination and quantification of oxidation induced interstitial injection via Ge implants

Thomas P. Martin, K. S. Jones, Renata A. Camillo-Castillo, Christopher Hatem, Yan Xin, Robert G. Elliman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The presence of Silicon-Germanium (SiGe) alloys at the Si/SiO2 interface during oxidation is known to suppress the injection of silicon self-interstitials that normally accompanies silicon oxidation and lead to observed effects such as Oxidation Enhanced Diffusion (OED) and stacking fault growth. This study uses a layer of implantation induced dislocation loops to measure interstitial injection as a function of SiGe layer thickness. The loops were introduced by implanting phosphorus and thermal annealing, and Germanium was subsequently introduced via a second implant at 3 keV over a range of doses between 1.7 × 1014 cm-2 and 1.4 × 1215 cm-2. Results show that partial suppression of interstitial injection can be observed for sub-monolayer doses of germanium, and that more than three monolayers of SiGe are necessary to fully suppress interstitial injection below our detection limit during oxidation. They further show that low energy implantation of germanium opens up possibilities to eliminate or modulate injection of interstitials during thermal processing of future devices.

    Original languageEnglish
    Title of host publicationProcesses at the Semiconductor Solution Interface 7
    EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. Hillier, R. P. Lynch, P. Vereecken, H. Wang, M. Sunkara
    PublisherElectrochemical Society Inc.
    Pages135-143
    Number of pages9
    Edition4
    ISBN (Electronic)9781607688075
    DOIs
    Publication statusPublished - 2017
    EventProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017 - New Orleans, United States
    Duration: 28 May 20171 Jun 2017

    Publication series

    NameECS Transactions
    Number4
    Volume77
    ISSN (Print)1938-6737
    ISSN (Electronic)1938-5862

    Conference

    ConferenceProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017
    Country/TerritoryUnited States
    CityNew Orleans
    Period28/05/171/06/17

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