Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Ikurou Umezu; Jeffrey M. Warrender; Supakit Charnvanichborikarn; Atsushi Kohno; James S. Williams; Malek Tabbal; Dimitris G. Papazoglou; Xi Cheng Zhang; Michael J. Aziz

doi:10.1063/1.4804935

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Ikurou Umezu, Jeffrey M. Warrender, Supakit Charnvanichborikarn, Atsushi Kohno, James S. Williams, Malek Tabbal, Dimitris G. Papazoglou, Xi Cheng Zhang, Michael J. Aziz

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Abstract

We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.

Original language	English
Article number	213501
Journal	Journal of Applied Physics
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.4804935
Publication status	Published - 7 Jun 2013

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title = "Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens",

abstract = "We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.",

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T1 - Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

AU - Umezu, Ikurou

AU - Warrender, Jeffrey M.

AU - Charnvanichborikarn, Supakit

AU - Kohno, Atsushi

AU - Williams, James S.

AU - Tabbal, Malek

AU - Papazoglou, Dimitris G.

AU - Zhang, Xi Cheng

AU - Aziz, Michael J.

PY - 2013/6/7

Y1 - 2013/6/7

N2 - We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.

AB - We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.

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DO - 10.1063/1.4804935

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VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

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