Abstract
Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J 0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.
Original language | English |
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Article number | 044508 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 4 |
DOIs | |
Publication status | Published - 28 Jul 2013 |