Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Di Yan, Andres Cuevas

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)

    Abstract

    Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J 0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.

    Original languageEnglish
    Article number044508
    JournalJournal of Applied Physics
    Volume114
    Issue number4
    DOIs
    Publication statusPublished - 28 Jul 2013

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