TY - JOUR
T1 - Energy levels of self-trapped holes in amorphous SiO2
T2 - Fictive temperature dependence
AU - Wang, R. P.
AU - Saito, K.
AU - Ikushima, A. J.
PY - 2009/5/7
Y1 - 2009/5/7
N2 - Fictive temperature (Tf) dependence of self-trapped holes (STHs) in low temperature UV-irradiated silica glasses was systematically investigated by the electron spin resonance (ESR) method. The decay of the ESR signals was found to be bleaching photon energy dependent and to follow the stretched exponential decay function at each bleaching wavelength. When the one-photon process is dominant during the photo-bleaching process, where the recombination of electrons excited from the valence band with the holes in the STH band results in the decay of STH signals, the energy levels of STH1 were thus derived at 1.75 0.02 eV, 1.61 0.03 eV, 1.45 0.05 eV and STH2 at 1.68 0.02 eV, 1.44 0.02 eV, 1.25 0.04 eV, respectively, for Tf = 1500, 1350 and 1200 °C samples.
AB - Fictive temperature (Tf) dependence of self-trapped holes (STHs) in low temperature UV-irradiated silica glasses was systematically investigated by the electron spin resonance (ESR) method. The decay of the ESR signals was found to be bleaching photon energy dependent and to follow the stretched exponential decay function at each bleaching wavelength. When the one-photon process is dominant during the photo-bleaching process, where the recombination of electrons excited from the valence band with the holes in the STH band results in the decay of STH signals, the energy levels of STH1 were thus derived at 1.75 0.02 eV, 1.61 0.03 eV, 1.45 0.05 eV and STH2 at 1.68 0.02 eV, 1.44 0.02 eV, 1.25 0.04 eV, respectively, for Tf = 1500, 1350 and 1200 °C samples.
UR - http://www.scopus.com/inward/record.url?scp=65449165061&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/42/9/095418
DO - 10.1088/0022-3727/42/9/095418
M3 - Article
SN - 0022-3727
VL - 42
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 9
M1 - 095418
ER -