Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

Y. Fu; M. Willander; X. Q. Liu; W. Lu; S. C. Shen; H. H. Tan; S. Yuan; C. Jagadish

doi:10.1006/spmi.1999.0783

Energy sublevels in an Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire

Y. Fu^*, M. Willander, X. Q. Liu, W. Lu, S. C. Shen, H. H. Tan, S. Yuan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report the successful fabrication of a V-groove Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.

Original language	English
Pages (from-to)	307-315
Number of pages	9
Journal	Superlattices and Microstructures
Volume	26
Issue number	5
DOIs	https://doi.org/10.1006/spmi.1999.0783
Publication status	Published - Nov 1999

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title = "Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire",

abstract = "We report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.",

author = "Y. Fu and M. Willander and Liu, {X. Q.} and W. Lu and Shen, {S. C.} and Tan, {H. H.} and S. Yuan and C. Jagadish",

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language = "English",

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T1 - Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

AU - Fu, Y.

AU - Willander, M.

AU - Liu, X. Q.

AU - Lu, W.

AU - Shen, S. C.

AU - Tan, H. H.

AU - Yuan, S.

AU - Jagadish, C.

PY - 1999/11

Y1 - 1999/11

N2 - We report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.

AB - We report the successful fabrication of a V-groove Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.

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U2 - 10.1006/spmi.1999.0783

DO - 10.1006/spmi.1999.0783

M3 - Article

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

ER -

Energy sublevels in an Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire

Abstract

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