TY - JOUR
T1 - Engineering III–V Semiconductor Nanowires for Device Applications
AU - Wong-Leung, Jennifer
AU - Yang, Inseok
AU - Li, Ziyuan
AU - Karuturi, Siva Krishna
AU - Fu, Lan
AU - Tan, Hark Hoe
AU - Jagadish, Chennupati
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/5/1
Y1 - 2020/5/1
N2 - III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
AB - III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
KW - lasers
KW - light-emitting diodes
KW - metal–organic chemical vapor deposition (MOCVD)
KW - scanning transmission electron microscopy
KW - semiconductor nanowires
KW - solar cells
KW - water splitting
UR - http://www.scopus.com/inward/record.url?scp=85074385046&partnerID=8YFLogxK
U2 - 10.1002/adma.201904359
DO - 10.1002/adma.201904359
M3 - Review article
SN - 0935-9648
VL - 32
JO - Advanced Materials
JF - Advanced Materials
IS - 18
M1 - 1904359
ER -