Engineering semiconductor nanowires for photodetection: From visible to terahertz

Hannah J. Joyce, Jack Alexander-Webber, Kun Peng, Michael B. Johnston, Patrick Parkinson, H. Hoe Tan, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.

    Original languageEnglish
    Title of host publicationOptical Sensing, Imaging, and Photon Counting
    Subtitle of host publicationFrom X-Rays to THz
    EditorsManijeh Razeghi, Oleg Mitrofanov, Jose Luis Pau Vizcaino, Chee Hing Tan
    PublisherSPIE
    ISBN (Electronic)9781510620292
    DOIs
    Publication statusPublished - 2018
    EventOptical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 - San Diego, United States
    Duration: 22 Aug 201823 Aug 2018

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume10729
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Conference

    ConferenceOptical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018
    Country/TerritoryUnited States
    CitySan Diego
    Period22/08/1823/08/18

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