TY - JOUR
T1 - Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
AU - Fonseka, H. Aruni
AU - Caroff, Philippe
AU - Guo, Yanan
AU - Sanchez, Ana M.
AU - Tan, Hark Hoe
AU - Jagadish, Chennupati
N1 - Publisher Copyright:
© 2019, The Author(s).
PY - 2019
Y1 - 2019
N2 - In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.
AB - In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.
KW - Cross-section shape
KW - Four-sided radial heterostructures
KW - Nanowire facets
KW - [100] oriented nanowires
UR - http://www.scopus.com/inward/record.url?scp=85077168192&partnerID=8YFLogxK
U2 - 10.1186/s11671-019-3177-6
DO - 10.1186/s11671-019-3177-6
M3 - Article
SN - 1931-7573
VL - 14
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 399
ER -