Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Ruixing Feng; Felipe Kremer; David J. Sprouster; Sahar Mirzaei; Stefan Decoster; Chris J. Glover; Scott A. Medling; John Lundsgaard Hansen; Arne Nylandsted-Larsen; Salvy P. Russo; Mark C. Ridgway

doi:10.1080/21663831.2016.1169229

Enhanced Electrical Activation in In-Implanted Si_0.35Ge_0.65 by C Co-Doping

Ruixing Feng^*, Felipe Kremer, David J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris J. Glover, Scott A. Medling, John Lundsgaard Hansen, Arne Nylandsted-Larsen, Salvy P. Russo, Mark C. Ridgway

^*Corresponding author for this work

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Abstract

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si_0.35Ge_0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si_0.35Ge_0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

Original language	English
Pages (from-to)	29-34
Number of pages	6
Journal	Materials Research Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1080/21663831.2016.1169229
Publication status	Published - 2 Jan 2017

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10.1080/21663831.2016.1169229

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@article{b5ce6c1b58de47598dda46711dddacb7,

title = "Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping",

abstract = "In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.",

keywords = "C + In co-doping, Hall Effect, SiGe, X-ray absorption fine structure",

author = "Ruixing Feng and Felipe Kremer and Sprouster, {David J.} and Sahar Mirzaei and Stefan Decoster and Glover, {Chris J.} and Medling, {Scott A.} and Hansen, {John Lundsgaard} and Arne Nylandsted-Larsen and Russo, {Salvy P.} and Ridgway, {Mark C.}",

note = "Publisher Copyright: {\textcopyright} 2016 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.",

year = "2017",

month = jan,

day = "2",

doi = "10.1080/21663831.2016.1169229",

language = "English",

volume = "5",

pages = "29--34",

journal = "Materials Research Letters",

issn = "2166-3831",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

AU - Feng, Ruixing

AU - Kremer, Felipe

AU - Sprouster, David J.

AU - Mirzaei, Sahar

AU - Decoster, Stefan

AU - Glover, Chris J.

AU - Medling, Scott A.

AU - Hansen, John Lundsgaard

AU - Nylandsted-Larsen, Arne

AU - Russo, Salvy P.

AU - Ridgway, Mark C.

PY - 2017/1/2

Y1 - 2017/1/2

N2 - In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

AB - In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

KW - C + In co-doping

KW - Hall Effect

KW - SiGe

KW - X-ray absorption fine structure

UR - http://www.scopus.com/inward/record.url?scp=84981736247&partnerID=8YFLogxK

U2 - 10.1080/21663831.2016.1169229

DO - 10.1080/21663831.2016.1169229

M3 - Article

SN - 2166-3831

VL - 5

SP - 29

EP - 34

JO - Materials Research Letters

JF - Materials Research Letters

IS - 1

ER -

Enhanced Electrical Activation in In-Implanted Si_0.35Ge_0.65 by C Co-Doping

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