Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Q. Gao; H. H. Tan; C. Jagadish; B. Q. Sun; M. Gal; L. Ouyang; J. Zou

doi:10.1063/1.1697628

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Q. Gao^*, H. H. Tan, C. Jagadish, B. Q. Sun, M. Gal, L. Ouyang, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The improvement of the photoluminescence (PL) properties of GaAsN/GaAs quantum well (QW) structures by inserting multiple monolayer thick InAs strain compensating layers (SCL) was analyzed. The QW structures were grown on GaAs substrates using metallorganic chemical vapor deposition (MOCVD). The cross-sectional transmission electron microscopy (XTEM) was used to study the microstructural quality of the QW structures. The low temperature PL and the room temperature (RT) PL were used to study the optical properties. It was observed that the InAs-inserted GaAsN/GaAs QW structure exhibited an enhanced PL intensity and a blueshift of PL emission.

Original language	English
Pages (from-to)	2536-2538
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1697628
Publication status	Published - 5 Apr 2004

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title = "Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers",

abstract = "The improvement of the photoluminescence (PL) properties of GaAsN/GaAs quantum well (QW) structures by inserting multiple monolayer thick InAs strain compensating layers (SCL) was analyzed. The QW structures were grown on GaAs substrates using metallorganic chemical vapor deposition (MOCVD). The cross-sectional transmission electron microscopy (XTEM) was used to study the microstructural quality of the QW structures. The low temperature PL and the room temperature (RT) PL were used to study the optical properties. It was observed that the InAs-inserted GaAsN/GaAs QW structure exhibited an enhanced PL intensity and a blueshift of PL emission.",

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year = "2004",

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T1 - Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Sun, B. Q.

AU - Gal, M.

AU - Ouyang, L.

AU - Zou, J.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The improvement of the photoluminescence (PL) properties of GaAsN/GaAs quantum well (QW) structures by inserting multiple monolayer thick InAs strain compensating layers (SCL) was analyzed. The QW structures were grown on GaAs substrates using metallorganic chemical vapor deposition (MOCVD). The cross-sectional transmission electron microscopy (XTEM) was used to study the microstructural quality of the QW structures. The low temperature PL and the room temperature (RT) PL were used to study the optical properties. It was observed that the InAs-inserted GaAsN/GaAs QW structure exhibited an enhanced PL intensity and a blueshift of PL emission.

AB - The improvement of the photoluminescence (PL) properties of GaAsN/GaAs quantum well (QW) structures by inserting multiple monolayer thick InAs strain compensating layers (SCL) was analyzed. The QW structures were grown on GaAs substrates using metallorganic chemical vapor deposition (MOCVD). The cross-sectional transmission electron microscopy (XTEM) was used to study the microstructural quality of the QW structures. The low temperature PL and the room temperature (RT) PL were used to study the optical properties. It was observed that the InAs-inserted GaAsN/GaAs QW structure exhibited an enhanced PL intensity and a blueshift of PL emission.

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U2 - 10.1063/1.1697628

DO - 10.1063/1.1697628

M3 - Article

SN - 0003-6951

VL - 84

SP - 2536

EP - 2538

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

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