Enhanced thermal stability and electrical behavior of Zn-doped Sb 2Te films for phase change memory application

Xiang Shen; Guoxiang Wang; R. P. Wang; Shixun Dai; Liangcai Wu; Yimin Chen; Tiefeng Xu; Qiuhua Nie

doi:10.1063/1.4799370

Enhanced thermal stability and electrical behavior of Zn-doped Sb ₂Te films for phase change memory application

Xiang Shen^*, Guoxiang Wang, R. P. Wang, Shixun Dai, Liangcai Wu, Yimin Chen, Tiefeng Xu, Qiuhua Nie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn_x(Sb₂Te)_1-x films and be almost linearly with the wide range of Zn-doping concentration from x 0 to 29.67 at.. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn_26.07(Sb₂Te) _73.93 and Zn_29.67(Sb₂Te)_70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb₂Te crystalline grains.

Original language	English
Article number	131902
Journal	Applied Physics Letters
Volume	102
Issue number	13
DOIs	https://doi.org/10.1063/1.4799370
Publication status	Published - 1 Apr 2013

Access to Document

10.1063/1.4799370

Cite this

@article{934da4dc07e042b5b74c54243676c38e,

title = "Enhanced thermal stability and electrical behavior of Zn-doped Sb 2Te films for phase change memory application",

abstract = "Zn-doped Sb2Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Znx(Sb2Te)1-x films and be almost linearly with the wide range of Zn-doping concentration from x 0 to 29.67 at.. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼105. Especially, the Zn26.07(Sb2Te) 73.93 and Zn29.67(Sb2Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb2Te crystalline grains.",

author = "Xiang Shen and Guoxiang Wang and Wang, {R. P.} and Shixun Dai and Liangcai Wu and Yimin Chen and Tiefeng Xu and Qiuhua Nie",

year = "2013",

month = apr,

day = "1",

doi = "10.1063/1.4799370",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Enhanced thermal stability and electrical behavior of Zn-doped Sb 2Te films for phase change memory application

AU - Shen, Xiang

AU - Wang, Guoxiang

AU - Wang, R. P.

AU - Dai, Shixun

AU - Wu, Liangcai

AU - Chen, Yimin

AU - Xu, Tiefeng

AU - Nie, Qiuhua

PY - 2013/4/1

Y1 - 2013/4/1

N2 - Zn-doped Sb2Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Znx(Sb2Te)1-x films and be almost linearly with the wide range of Zn-doping concentration from x 0 to 29.67 at.. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼105. Especially, the Zn26.07(Sb2Te) 73.93 and Zn29.67(Sb2Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb2Te crystalline grains.

AB - Zn-doped Sb2Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Znx(Sb2Te)1-x films and be almost linearly with the wide range of Zn-doping concentration from x 0 to 29.67 at.. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼105. Especially, the Zn26.07(Sb2Te) 73.93 and Zn29.67(Sb2Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb2Te crystalline grains.

UR - http://www.scopus.com/inward/record.url?scp=84876131746&partnerID=8YFLogxK

U2 - 10.1063/1.4799370

DO - 10.1063/1.4799370

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131902

ER -

Enhanced thermal stability and electrical behavior of Zn-doped Sb ₂Te films for phase change memory application

Abstract

Access to Document

Other files and links

Fingerprint

Cite this