Abstract
The adhesion of thin metallic films to silicon substrates is shown to improve following irradiation with a flux of either 21.2-eV (He I) 10.2-eV (H Lyman α) photons. The improved adhesion is similar to that found following MeV energy ion irradiation and keV energy electron irradiation, adding support to the view that electronic excitation and/or ionization and precursors to the stronger bonding configuration.
Original language | English |
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Pages (from-to) | 137-139 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 45 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1984 |
Externally published | Yes |