Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

Bryce S. Richards; Avi Shalav

doi:10.1109/TED.2007.903197

Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

Bryce S. Richards^*, Avi Shalav

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

Abstract

A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY_0.8 F₄: Er_0.2³⁺) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (λ) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10^-2 cm²/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm² of 1523-nm excitation (LQE = 7.0 × 10^-2 cm²/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10^-2 cm²/W) could be realistically achieved.

Original language	English
Pages (from-to)	2679-2684
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	10
DOIs	https://doi.org/10.1109/TED.2007.903197
Publication status	Published - Oct 2007

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@article{e211e78af310461c908fd8c528cb167e,

title = "Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion",

abstract = "A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (λ) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4\% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7\% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0\% (5.8 × 10-2 cm2/W) could be realistically achieved.",

keywords = "Luminescence, Photovoltaics (PVs), Silicon solar cells, Up-conversion (UC)",

author = "Richards, \{Bryce S.\} and Avi Shalav",

year = "2007",

month = oct,

doi = "10.1109/TED.2007.903197",

language = "English",

volume = "54",

pages = "2679--2684",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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TY - JOUR

T1 - Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

AU - Richards, Bryce S.

AU - Shalav, Avi

PY - 2007/10

Y1 - 2007/10

N2 - A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (λ) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10-2 cm2/W) could be realistically achieved.

AB - A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (λ) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10-2 cm2/W) could be realistically achieved.

KW - Luminescence

KW - Photovoltaics (PVs)

KW - Silicon solar cells

KW - Up-conversion (UC)

UR - https://www.scopus.com/pages/publications/35148888969

U2 - 10.1109/TED.2007.903197

DO - 10.1109/TED.2007.903197

M3 - Article

SN - 0018-9383

VL - 54

SP - 2679

EP - 2684

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

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