Epitaxial crystallisation of tin implanted silicon

R. P. Thornton; R. G. Elliman; J. S. Williams

doi:10.1016/0168-583X(89)90209-7

Epitaxial crystallisation of tin implanted silicon

R. P. Thornton^*, R. G. Elliman, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si⁺ and Sn⁺ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.

Original language	English
Pages (from-to)	387-390
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	37-38
Issue number	C
DOIs	https://doi.org/10.1016/0168-583X(89)90209-7
Publication status	Published - 2 Feb 1989
Externally published	Yes

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title = "Epitaxial crystallisation of tin implanted silicon",

abstract = "Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.",

author = "Thornton, {R. P.} and Elliman, {R. G.} and Williams, {J. S.}",

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T1 - Epitaxial crystallisation of tin implanted silicon

AU - Thornton, R. P.

AU - Elliman, R. G.

AU - Williams, J. S.

PY - 1989/2/2

Y1 - 1989/2/2

N2 - Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.

AB - Time resolved reflectivity, Rutherford backscattering and channeling, and transmission electron microscopy have been used to examine the epitaxy of amorphous layers formed by Si+ and Sn+ ion implantation into both 〈100〉 and 〈111〉 silicon. Although Sn at concentrations less than about 1 at.% does not have any influence on the regrowth kinetics of (100) silicon, it has a beneficial effect on the growth of (111) silicon. At high concentrations Sn retards epitaxy and can lead to a polycrystalline phase transformation.

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U2 - 10.1016/0168-583X(89)90209-7

DO - 10.1016/0168-583X(89)90209-7

M3 - Article

AN - SCOPUS:0024608656

SN - 0168-583X

VL - 37-38

SP - 387

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - C

ER -

Epitaxial crystallisation of tin implanted silicon

Abstract

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