Epitaxial germanium nanowires on GaAs grown by chemical vapor deposition

Yong Kim*, Man Suk Song, Young Dae Kim, Jae Hun Jung, Q. Gao, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    We successfully synthesized epitaxial Ge nanowires on GaAs (100) and GaAs (111)B substrates by using Au-nanoparticle-catalyzed chemical vapor deposition. From an analysis of the inclined angles of the Ge nanowires to the substrate normal, we find that the epitaxial Ge nanowires grow along the 〈110〉 directions regardless of the substrate's orientation. This is in contrast with epitaxial Ge nanowires on Si and Ge substrates, which grow predominantly along the 〈111〉 direction. In addition, tapering of the Ge nanowires is minimal even at relatively high growth temperatures due to the low surface mobility of the Ge adatoms on the GaAs surface.

    Original languageEnglish
    Pages (from-to)120-124
    Number of pages5
    JournalJournal of the Korean Physical Society
    Volume51
    Issue number1
    DOIs
    Publication statusPublished - Jul 2007

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