Epitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition

Joseph Paulraj; Rongping Wang; Matthew Sellars; Barry Luther-Davies

doi:10.1007/s00339-016-9968-z

Epitaxial growth of Sc₂O₃ films on Gd₂O₃-buffered Si substrates by pulsed laser deposition

Joseph Paulraj, Rongping Wang^*, Matthew Sellars, Barry Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the optimal conditions to prepare high-quality Sc₂O₃ films on Gd₂O₃-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals. Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc₂O₃ (2 2 2) diffraction peak was located at 2θ = 31.5° with a full width at half maxima (FWHM) of 0.16°, and its rocking curve had a FWHM of 0.10°. In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc₂O₃ (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality.

Original language	English
Article number	422
Journal	Applied Physics A: Materials Science and Processing
Volume	122
Issue number	4
DOIs	https://doi.org/10.1007/s00339-016-9968-z
Publication status	Published - 1 Apr 2016

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title = "Epitaxial growth of Sc2O3 films on Gd2O3-buffered Si substrates by pulsed laser deposition",

abstract = "We investigated the optimal conditions to prepare high-quality Sc2O3 films on Gd2O3-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals. Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc2O3 (2 2 2) diffraction peak was located at 2θ = 31.5° with a full width at half maxima (FWHM) of 0.16°, and its rocking curve had a FWHM of 0.10°. In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc2O3 (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality.",

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AU - Paulraj, Joseph

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AU - Sellars, Matthew

AU - Luther-Davies, Barry

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AB - We investigated the optimal conditions to prepare high-quality Sc2O3 films on Gd2O3-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals. Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc2O3 (2 2 2) diffraction peak was located at 2θ = 31.5° with a full width at half maxima (FWHM) of 0.16°, and its rocking curve had a FWHM of 0.10°. In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc2O3 (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality.

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Epitaxial growth of Sc₂O₃ films on Gd₂O₃-buffered Si substrates by pulsed laser deposition

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