Epitaxially grown GaAsN random laser

B. Q. Sun; M. Gal; Q. Gao; H. H. Tan; C. Jagadish; T. Puzzer; L. Ouyang; J. Zou

doi:10.1063/1.1568533

Epitaxially grown GaAsN random laser

B. Q. Sun^*, M. Gal, Q. Gao, H. H. Tan, C. Jagadish, T. Puzzer, L. Ouyang, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The photoluminescence properties of as-grown GaAs_1-xN_x epitaxial layers grown on GaAs containing 0.6%, 1.77% and 2.8% nitrogen were investigated. The laser emissions from thick GaAs_0.972N_0.028 layers were also examined. It was found that these laser emissions have characteristic lasing properties of random lasers.

Original language	English
Pages (from-to)	5855-5858
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	10 1
DOIs	https://doi.org/10.1063/1.1568533
Publication status	Published - 15 May 2003

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@article{b5555488f4b54af8bb024f58d640c99a,

title = "Epitaxially grown GaAsN random laser",

abstract = "The photoluminescence properties of as-grown GaAs1-xNx epitaxial layers grown on GaAs containing 0.6%, 1.77% and 2.8% nitrogen were investigated. The laser emissions from thick GaAs0.972N0.028 layers were also examined. It was found that these laser emissions have characteristic lasing properties of random lasers.",

author = "Sun, {B. Q.} and M. Gal and Q. Gao and Tan, {H. H.} and C. Jagadish and T. Puzzer and L. Ouyang and J. Zou",

year = "2003",

month = may,

day = "15",

doi = "10.1063/1.1568533",

language = "English",

volume = "93",

pages = "5855--5858",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10 1",

}

TY - JOUR

T1 - Epitaxially grown GaAsN random laser

AU - Sun, B. Q.

AU - Gal, M.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Puzzer, T.

AU - Ouyang, L.

AU - Zou, J.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The photoluminescence properties of as-grown GaAs1-xNx epitaxial layers grown on GaAs containing 0.6%, 1.77% and 2.8% nitrogen were investigated. The laser emissions from thick GaAs0.972N0.028 layers were also examined. It was found that these laser emissions have characteristic lasing properties of random lasers.

AB - The photoluminescence properties of as-grown GaAs1-xNx epitaxial layers grown on GaAs containing 0.6%, 1.77% and 2.8% nitrogen were investigated. The laser emissions from thick GaAs0.972N0.028 layers were also examined. It was found that these laser emissions have characteristic lasing properties of random lasers.

UR - http://www.scopus.com/inward/record.url?scp=0037636607&partnerID=8YFLogxK

U2 - 10.1063/1.1568533

DO - 10.1063/1.1568533

M3 - Article

SN - 0021-8979

VL - 93

SP - 5855

EP - 5858

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 1

ER -

Epitaxially grown GaAsN random laser

Abstract

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