Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Q. Gao; H. J. Joyce; S. Paiman; H. H. Tan; Y. Kim; L. M. Smith; H. E. Jackson; J. M. Yarrison-Rice; X. Zhang; J. Zou; C. Jagadish

doi:10.1109/OECC.2009.5219756

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Q. Gao^*, H. J. Joyce, S. Paiman, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, X. Zhang, J. Zou, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.

Original language	English
Title of host publication	2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs	https://doi.org/10.1109/OECC.2009.5219756
Publication status	Published - 2009
Event	2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China Duration: 13 Jul 2009 → 17 Jul 2009

Publication series

Name	2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference	2009 14th OptoElectronics and Communications Conference, OECC 2009
Country/Territory	China
City	Hong Kong
Period	13/07/09 → 17/07/09

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10.1109/OECC.2009.5219756

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Gao, Q., Joyce, H. J., Paiman, S., Tan, H. H., Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J., & Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. In 2009 14th OptoElectronics and Communications Conference, OECC 2009 Article 5219756 (2009 14th OptoElectronics and Communications Conference, OECC 2009). https://doi.org/10.1109/OECC.2009.5219756

@inproceedings{a38715c207304c53881f9a688c86479d,

title = "Epitaxy of III-V semiconductor nanowires towards optoelectronic devices",

abstract = "GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.",

author = "Q. Gao and Joyce, {H. J.} and S. Paiman and Tan, {H. H.} and Y. Kim and Smith, {L. M.} and Jackson, {H. E.} and Yarrison-Rice, {J. M.} and X. Zhang and J. Zou and C. Jagadish",

year = "2009",

doi = "10.1109/OECC.2009.5219756",

language = "English",

isbn = "9781424441037",

series = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

booktitle = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

note = "2009 14th OptoElectronics and Communications Conference, OECC 2009 ; Conference date: 13-07-2009 Through 17-07-2009",

}

Gao, Q, Joyce, HJ, Paiman, S, Tan, HH, Kim, Y, Smith, LM, Jackson, HE, Yarrison-Rice, JM, Zhang, X, Zou, J & Jagadish, C 2009, Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5219756, 2009 14th OptoElectronics and Communications Conference, OECC 2009, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 13/07/09. https://doi.org/10.1109/OECC.2009.5219756

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. / Gao, Q.; Joyce, H. J.; Paiman, S. et al.
2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5219756 (2009 14th OptoElectronics and Communications Conference, OECC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

AU - Gao, Q.

AU - Joyce, H. J.

AU - Paiman, S.

AU - Tan, H. H.

AU - Kim, Y.

AU - Smith, L. M.

AU - Jackson, H. E.

AU - Yarrison-Rice, J. M.

AU - Zhang, X.

AU - Zou, J.

AU - Jagadish, C.

PY - 2009

Y1 - 2009

N2 - GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.

AB - GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.

UR - http://www.scopus.com/inward/record.url?scp=70350734549&partnerID=8YFLogxK

U2 - 10.1109/OECC.2009.5219756

DO - 10.1109/OECC.2009.5219756

M3 - Conference contribution

SN - 9781424441037

T3 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

BT - 2009 14th OptoElectronics and Communications Conference, OECC 2009

T2 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

Y2 - 13 July 2009 through 17 July 2009

ER -

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

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