Etch-back simplifies interdigitated back contact solar cells

Ngwe Zin, Andrew Blakers, Evan Franklin, Kean Fong, Teng Kho, Chog Barugkin, Eric Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (Scopus)

    Abstract

    The process of making Interdigitated Back Contact (IBC) solar cell is implemented by a novel simplified etch-back technique, while aiming for no compromise on high-efficiency potentials. Simplified etch-back creates localized heavy and light phosphorus and boron diffusions simultaneously. This process also leaves localised heavy diffusions to be approximately a micron higher than neighbouring light diffusion regions. In comparison to the IBC solar cells that ANU developed to date [1], key advantages of this technique feature reduction in cell process steps; requires only two diffusions to create p, p+, n and n+ diffusions; no high-temperature oxidation masking steps required as diffusion barriers; independent optimization of contact recombination, lateral carriers transport and surface passivation; and potential higher silicon bulk lifetime and reduced contamination due to low thermal budget. Based on the etch-back technique, the total saturation current density deduced from the test structures for the IBC cell is below 30 fA/cm2.

    Original languageEnglish
    Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages3046-3050
    Number of pages5
    ISBN (Electronic)9781479943982
    DOIs
    Publication statusPublished - 15 Oct 2014
    Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
    Duration: 8 Jun 201413 Jun 2014

    Publication series

    Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

    Conference

    Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
    Country/TerritoryUnited States
    CityDenver
    Period8/06/1413/06/14

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