@inproceedings{f2ef336d44c44ceb9491fa0488c34fad,
title = "Etch-back simplifies interdigitated back contact solar cells",
abstract = "The process of making Interdigitated Back Contact (IBC) solar cell is implemented by a novel simplified etch-back technique, while aiming for no compromise on high-efficiency potentials. Simplified etch-back creates localized heavy and light phosphorus and boron diffusions simultaneously. This process also leaves localised heavy diffusions to be approximately a micron higher than neighbouring light diffusion regions. In comparison to the IBC solar cells that ANU developed to date [1], key advantages of this technique feature reduction in cell process steps; requires only two diffusions to create p, p+, n and n+ diffusions; no high-temperature oxidation masking steps required as diffusion barriers; independent optimization of contact recombination, lateral carriers transport and surface passivation; and potential higher silicon bulk lifetime and reduced contamination due to low thermal budget. Based on the etch-back technique, the total saturation current density deduced from the test structures for the IBC cell is below 30 fA/cm2.",
keywords = "IBC, J, charge density, diffusions, etch-back, high efficiency, solar cell",
author = "Ngwe Zin and Andrew Blakers and Evan Franklin and Kean Fong and Teng Kho and Chog Barugkin and Eric Wang",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925578",
language = "English",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3046--3050",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
address = "United States",
}