Etching silicon by SF6 in a continuous and pulsed power helicon reactor

A. Herrick; A. J. Perry; R. W. Boswell

doi:10.1116/1.1575215

Etching silicon by SF₆ in a continuous and pulsed power helicon reactor

A. Herrick, A. J. Perry, R. W. Boswell

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The etching of silicon by SF₆ in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.

Original language	English
Pages (from-to)	955-966
Number of pages	12
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1575215
Publication status	Published - 2003

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10.1116/1.1575215

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title = "Etching silicon by SF6 in a continuous and pulsed power helicon reactor",

abstract = "The etching of silicon by SF6 in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.",

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Etching silicon by SF6 in a continuous and pulsed power helicon reactor

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Etching silicon by SF₆ in a continuous and pulsed power helicon reactor