Etching silicon by SF6 in a continuous and pulsed power helicon reactor

A. Herrick; A. J. Perry; R. W. Boswell

doi:10.1116/1.1575215

Etching silicon by SF₆ in a continuous and pulsed power helicon reactor

A. Herrick, A. J. Perry, R. W. Boswell

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The etching of silicon by SF₆ in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.

Original language	English
Pages (from-to)	955-966
Number of pages	12
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1575215
Publication status	Published - 2003

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10.1116/1.1575215

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@article{d520723610584fefac101cf4a44b9cae,

title = "Etching silicon by SF6 in a continuous and pulsed power helicon reactor",

abstract = "The etching of silicon by SF6 in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.",

author = "A. Herrick and Perry, \{A. J.\} and Boswell, \{R. W.\}",

year = "2003",

doi = "10.1116/1.1575215",

language = "English",

volume = "21",

pages = "955--966",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Etching silicon by SF6 in a continuous and pulsed power helicon reactor

AU - Herrick, A.

AU - Perry, A. J.

AU - Boswell, R. W.

PY - 2003

Y1 - 2003

N2 - The etching of silicon by SF6 in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.

AB - The etching of silicon by SF6 in a high density helicon reactor was studied. It was found that in general, the etch rate of silicon is proportional to the fluorine concentration. Applying a bias to the substrate did not increase the etch rate at high flow rates.

UR - http://www.scopus.com/inward/record.url?scp=0042531721&partnerID=8YFLogxK

U2 - 10.1116/1.1575215

DO - 10.1116/1.1575215

M3 - Article

SN - 0734-2101

VL - 21

SP - 955

EP - 966

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Etching silicon by SF6 in a continuous and pulsed power helicon reactor

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Etching silicon by SF₆ in a continuous and pulsed power helicon reactor