Evidence of impurity gettering by industrial phosphorus diffusion

A. Cuevas, D. MacDonald, M. Kerr, C. Samundsett, A. Sloan, S. Shea, A. Leo, M. Mrcarica, S. Winderbaum

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    18 Citations (Scopus)

    Abstract

    The possible benefits of phosphorus gettering as applied to production multicrystalline silicon wafers have been evaluated. After optimization of an open tube POCI3 process, relatively low temperatures and short times have been found to significantly improve the minority carrier lifetime of most wafers. The possible gettering action stemming from the industrial process of phosphorus diffusion has also been investigated and found to be similarly effective. Average lifetimes of 45μs (diffusion length of 360μm) were obtained, with some wafers reaching maximum values up to 130μs. Lifetime monitoring of a commercial cell fabrication line has also enabled characterization of the voltage limits imposed by the standard emitter and aluminum back-surface-field. The results indicate that the bulk, as improved by emitter gettering, is generally not the limiting factor on cell performance.

    Original languageEnglish
    Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages244-247
    Number of pages4
    ISBN (Electronic)0780357728
    DOIs
    Publication statusPublished - 2000
    Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
    Duration: 15 Sept 200022 Sept 2000

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    Volume2000-January
    ISSN (Print)0160-8371

    Conference

    Conference28th IEEE Photovoltaic Specialists Conference, PVSC 2000
    Country/TerritoryUnited States
    CityAnchorage
    Period15/09/0022/09/00

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