TY - GEN
T1 - Evidence of impurity gettering by industrial phosphorus diffusion
AU - Cuevas, A.
AU - MacDonald, D.
AU - Kerr, M.
AU - Samundsett, C.
AU - Sloan, A.
AU - Shea, S.
AU - Leo, A.
AU - Mrcarica, M.
AU - Winderbaum, S.
N1 - Publisher Copyright:
© 2000 IEEE.
PY - 2000
Y1 - 2000
N2 - The possible benefits of phosphorus gettering as applied to production multicrystalline silicon wafers have been evaluated. After optimization of an open tube POCI3 process, relatively low temperatures and short times have been found to significantly improve the minority carrier lifetime of most wafers. The possible gettering action stemming from the industrial process of phosphorus diffusion has also been investigated and found to be similarly effective. Average lifetimes of 45μs (diffusion length of 360μm) were obtained, with some wafers reaching maximum values up to 130μs. Lifetime monitoring of a commercial cell fabrication line has also enabled characterization of the voltage limits imposed by the standard emitter and aluminum back-surface-field. The results indicate that the bulk, as improved by emitter gettering, is generally not the limiting factor on cell performance.
AB - The possible benefits of phosphorus gettering as applied to production multicrystalline silicon wafers have been evaluated. After optimization of an open tube POCI3 process, relatively low temperatures and short times have been found to significantly improve the minority carrier lifetime of most wafers. The possible gettering action stemming from the industrial process of phosphorus diffusion has also been investigated and found to be similarly effective. Average lifetimes of 45μs (diffusion length of 360μm) were obtained, with some wafers reaching maximum values up to 130μs. Lifetime monitoring of a commercial cell fabrication line has also enabled characterization of the voltage limits imposed by the standard emitter and aluminum back-surface-field. The results indicate that the bulk, as improved by emitter gettering, is generally not the limiting factor on cell performance.
UR - http://www.scopus.com/inward/record.url?scp=84949558329&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.915803
DO - 10.1109/PVSC.2000.915803
M3 - Conference contribution
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 244
EP - 247
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -