@inproceedings{c54418c64c73430a815f48031cf0c006,
title = "Evidence of impurity gettering by industrial phosphorus diffusion",
abstract = "The possible benefits of phosphorus gettering as applied to production multicrystalline silicon wafers have been evaluated. After optimization of an open tube POCI3 process, relatively low temperatures and short times have been found to significantly improve the minority carrier lifetime of most wafers. The possible gettering action stemming from the industrial process of phosphorus diffusion has also been investigated and found to be similarly effective. Average lifetimes of 45μs (diffusion length of 360μm) were obtained, with some wafers reaching maximum values up to 130μs. Lifetime monitoring of a commercial cell fabrication line has also enabled characterization of the voltage limits imposed by the standard emitter and aluminum back-surface-field. The results indicate that the bulk, as improved by emitter gettering, is generally not the limiting factor on cell performance.",
author = "A. Cuevas and D. MacDonald and M. Kerr and C. Samundsett and A. Sloan and S. Shea and A. Leo and M. Mrcarica and S. Winderbaum",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",
year = "2000",
doi = "10.1109/PVSC.2000.915803",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "244--247",
booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",
address = "United States",
}