Evolution of epitaxial InAs nanowires on GaAs (111)B

Xin Zhang; Jin Zou; Mohanchand Paladugu; Yanan Guo; Yong Wang; Yong Kim; Hannah J. Joyce; Qiang Gao; H. Hoe Tan; Chennupati Jagadish

doi:10.1002/smll.200800690

Evolution of epitaxial InAs nanowires on GaAs (111)B

Xin Zhang, Jin Zou^*, Mohanchand Paladugu, Yanan Guo, Yong Wang, Yong Kim, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

A systematic investigation of the Au catalyst-assisted growth of epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images of InAs NWs with different growth times show no vertical NWs in the sample with 1 min growth of InAs. High resolution transmission electron microscopy (HRTEM) investigations performed at the trace/substrate interface to determine the strain status show many misfit dislocations at the InAs/GaAs interface. The interfacial energy of InAs/Au is found to be higher than that of GaAs/Au, and these energetic considerations result in the Au catalysts retaining contact with GaAs. Vertical NWs initiate at trace intersections where the Au catalysts can not retain interfaces with the GaAs substrate. HRTEM image showing the junction between the base and InAs trace clearly present the epitaxially grown base on the InAs trace.

Original language	English
Pages (from-to)	366-369
Number of pages	4
Journal	Small
Volume	5
Issue number	3
DOIs	https://doi.org/10.1002/smll.200800690
Publication status	Published - 6 Feb 2009

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10.1002/smll.200800690

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title = "Evolution of epitaxial InAs nanowires on GaAs (111)B",

abstract = "A systematic investigation of the Au catalyst-assisted growth of epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images of InAs NWs with different growth times show no vertical NWs in the sample with 1 min growth of InAs. High resolution transmission electron microscopy (HRTEM) investigations performed at the trace/substrate interface to determine the strain status show many misfit dislocations at the InAs/GaAs interface. The interfacial energy of InAs/Au is found to be higher than that of GaAs/Au, and these energetic considerations result in the Au catalysts retaining contact with GaAs. Vertical NWs initiate at trace intersections where the Au catalysts can not retain interfaces with the GaAs substrate. HRTEM image showing the junction between the base and InAs trace clearly present the epitaxially grown base on the InAs trace.",

keywords = "Epitaxy, GaAs, InAs, Interfacial energy, Nanowires",

author = "Xin Zhang and Jin Zou and Mohanchand Paladugu and Yanan Guo and Yong Wang and Yong Kim and Joyce, {Hannah J.} and Qiang Gao and Tan, {H. Hoe} and Chennupati Jagadish",

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doi = "10.1002/smll.200800690",

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T1 - Evolution of epitaxial InAs nanowires on GaAs (111)B

AU - Zhang, Xin

AU - Zou, Jin

AU - Paladugu, Mohanchand

AU - Guo, Yanan

AU - Wang, Yong

AU - Kim, Yong

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

PY - 2009/2/6

Y1 - 2009/2/6

N2 - A systematic investigation of the Au catalyst-assisted growth of epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images of InAs NWs with different growth times show no vertical NWs in the sample with 1 min growth of InAs. High resolution transmission electron microscopy (HRTEM) investigations performed at the trace/substrate interface to determine the strain status show many misfit dislocations at the InAs/GaAs interface. The interfacial energy of InAs/Au is found to be higher than that of GaAs/Au, and these energetic considerations result in the Au catalysts retaining contact with GaAs. Vertical NWs initiate at trace intersections where the Au catalysts can not retain interfaces with the GaAs substrate. HRTEM image showing the junction between the base and InAs trace clearly present the epitaxially grown base on the InAs trace.

AB - A systematic investigation of the Au catalyst-assisted growth of epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images of InAs NWs with different growth times show no vertical NWs in the sample with 1 min growth of InAs. High resolution transmission electron microscopy (HRTEM) investigations performed at the trace/substrate interface to determine the strain status show many misfit dislocations at the InAs/GaAs interface. The interfacial energy of InAs/Au is found to be higher than that of GaAs/Au, and these energetic considerations result in the Au catalysts retaining contact with GaAs. Vertical NWs initiate at trace intersections where the Au catalysts can not retain interfaces with the GaAs substrate. HRTEM image showing the junction between the base and InAs trace clearly present the epitaxially grown base on the InAs trace.

KW - Epitaxy

KW - GaAs

KW - InAs

KW - Interfacial energy

KW - Nanowires

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U2 - 10.1002/smll.200800690

DO - 10.1002/smll.200800690

M3 - Article

SN - 1613-6810

VL - 5

SP - 366

EP - 369

JO - Small

JF - Small

IS - 3

ER -

Evolution of epitaxial InAs nanowires on GaAs (111)B

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