Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer

C. Carmody; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2002.1237297

Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InP-and InGaAs-capped single In_0.53Ga_0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200°C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	491-494
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237297
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

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10.1109/COMMAD.2002.1237297

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Carmody, C., Tan, H. H., & Jagadish, C. (2002). Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 491-494). Article 1237297 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237297

Carmody, C. ; Tan, H. H. ; Jagadish, C. / Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 491-494 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{5d70df90a4a049dab531e6e9dc12aaf8,

title = "Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer",

abstract = "InP-and InGaAs-capped single In0.53Ga0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200°C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.",

author = "C. Carmody and Tan, {H. H.} and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

year = "2002",

doi = "10.1109/COMMAD.2002.1237297",

language = "English",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "491--494",

editor = "Michael Gal",

booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",

address = "United States",

}

Carmody, C, Tan, HH & Jagadish, C 2002, Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237297, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 491-494, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237297

Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer. / Carmody, C.; Tan, H. H.; Jagadish, C.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 491-494 1237297 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer

AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2002

Y1 - 2002

N2 - InP-and InGaAs-capped single In0.53Ga0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200°C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

AB - InP-and InGaAs-capped single In0.53Ga0.47As/InP quantum wells were implanted with 20 keV and 1 MeV P ions at 200°C. Blueshifts in the quantum well emissions after annealing were studied as a function of implant dose. Rutherford backscattering channeling spectrometry studies were used to monitor the damage created in the near surface region of the samples. The observed energy shifts have been correlated with damage accumulation and defect migration behaviour in both systems.

UR - http://www.scopus.com/inward/record.url?scp=84952644832&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2002.1237297

DO - 10.1109/COMMAD.2002.1237297

M3 - Conference contribution

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 491

EP - 494

BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

A2 - Gal, Michael

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

Y2 - 11 December 2002 through 13 December 2002

ER -

Carmody C, Tan HH , Jagadish C. Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 491-494. 1237297. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2002.1237297

Evolution of InGaAs/InP quantum well intermixing as a function of CAP layer

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