Evolution of palladium related defects in silicon

R. Dogra*, A. K. Sharma, A. P. Byrne, M. C. Ridgway

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (Scopus)

    Abstract

    The perturbed angular correlation technique is very well suited to characterize the structural, dynamic and electronic properties of impurity or impurity-defect complexes on an atomic scale. Using radioisotope probe 100Pd/100Rh, such measurements have been performed to study the palladium related defects in silicon as a function of dopant concentration (1015 to 1020 dopants cm-3), dopant type (P, As, Sb and B) and isochronal annealing. The palladiumvacancy, Pd-V-, and palladium-boron, Pd-B, defect complexes have been observed during isochronal annealing in highly doped n- and p-type type silicon respectively. The fractional population of the Pd-vacancy defect pair as a function of P concentration revealed a dominance of ionized vacancies, an effect of Fermi-level dependence. The absence of Pd-P pairing in n-Si suggests that Pd would never be gettered via phosphorus diffusion gettering mechanism.

    Original languageEnglish
    Title of host publicationSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
    Pages1033-1034
    Number of pages2
    Edition1
    DOIs
    Publication statusPublished - 2012
    Event56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India
    Duration: 19 Dec 201123 Dec 2011

    Publication series

    NameAIP Conference Proceedings
    Number1
    Volume1447
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Conference

    Conference56th DAE Solid State Physics Symposium 2011
    Country/TerritoryIndia
    CityKattankulathur, Tamilnadu
    Period19/12/1123/12/11

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