Evolution of wurtzite structured GaAs shells around InAs nanowire cores

M. Paladugu; J. Zou; Y. N. Guo; X. Zhang; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish; Y. Kim

doi:10.1007/s11671-009-9326-6

Evolution of wurtzite structured GaAs shells around InAs nanowire cores

M. Paladugu, J. Zou^*, Y. N. Guo, X. Zhang, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Y. Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

Original language	English
Pages (from-to)	846-849
Number of pages	4
Journal	Nanoscale Research Letters
Volume	4
Issue number	8
DOIs	https://doi.org/10.1007/s11671-009-9326-6
Publication status	Published - 2009

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title = "Evolution of wurtzite structured GaAs shells around InAs nanowire cores",

abstract = "GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.",

keywords = "Crystal structure, GaAs/InAs, Nanowire heterostructures",

author = "M. Paladugu and J. Zou and Guo, {Y. N.} and X. Zhang and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish and Y. Kim",

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T1 - Evolution of wurtzite structured GaAs shells around InAs nanowire cores

AU - Paladugu, M.

AU - Zou, J.

AU - Guo, Y. N.

AU - Zhang, X.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Kim, Y.

PY - 2009

Y1 - 2009

N2 - GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

AB - GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

KW - Crystal structure

KW - GaAs/InAs

KW - Nanowire heterostructures

UR - http://www.scopus.com/inward/record.url?scp=70349982842&partnerID=8YFLogxK

U2 - 10.1007/s11671-009-9326-6

DO - 10.1007/s11671-009-9326-6

M3 - Article

SN - 1931-7573

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SP - 846

EP - 849

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 8

ER -

Evolution of wurtzite structured GaAs shells around InAs nanowire cores

Abstract

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