EXAFS characterisation of Ge nanocrystals in silica

M. C. Ridgway; G. De M. Azevedo; C. J. Glover; R. G. Elliman; D. J. Llewellyn; A. Cheung; B. Johannessen; D. A. Brett; G. J. Foran

doi:10.1016/j.nimb.2004.01.004

EXAFS characterisation of Ge nanocrystals in silica

M. C. Ridgway^*, G. De M. Azevedo, C. J. Glover, R. G. Elliman, D. J. Llewellyn, A. Cheung, B. Johannessen, D. A. Brett, G. J. Foran

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance distribution deviates from that of bulk Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second and third nearest-neighbour shells. The extent of disorder in the nanocrystalline sample is comparable to that of relaxed amorphous material.

Original language	English
Pages (from-to)	421-426
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2004.01.004
Publication status	Published - Jun 2004
Event	Proceedings of the Twelfth International Conference on Radiation - Gramado, Brazil Duration: 31 Aug 2003 → 5 Sept 2003

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Ridgway, M. C., Azevedo, G. D. M., Glover, C. J., Elliman, R. G., Llewellyn, D. J., Cheung, A., Johannessen, B., Brett, D. A., & Foran, G. J. (2004). EXAFS characterisation of Ge nanocrystals in silica. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 218(1-4), 421-426. https://doi.org/10.1016/j.nimb.2004.01.004

@article{69375f01eee8403181c55cf1b3661712,

title = "EXAFS characterisation of Ge nanocrystals in silica",

abstract = "The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance distribution deviates from that of bulk Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second and third nearest-neighbour shells. The extent of disorder in the nanocrystalline sample is comparable to that of relaxed amorphous material.",

author = "Ridgway, \{M. C.\} and Azevedo, \{G. De M.\} and Glover, \{C. J.\} and Elliman, \{R. G.\} and Llewellyn, \{D. J.\} and A. Cheung and B. Johannessen and Brett, \{D. A.\} and Foran, \{G. J.\}",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2004.01.004",

language = "English",

volume = "218",

pages = "421--426",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Twelfth International Conference on Radiation ; Conference date: 31-08-2003 Through 05-09-2003",

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TY - JOUR

T1 - EXAFS characterisation of Ge nanocrystals in silica

AU - Ridgway, M. C.

AU - Azevedo, G. De M.

AU - Glover, C. J.

AU - Elliman, R. G.

AU - Llewellyn, D. J.

AU - Cheung, A.

AU - Johannessen, B.

AU - Brett, D. A.

AU - Foran, G. J.

PY - 2004/6

Y1 - 2004/6

N2 - The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance distribution deviates from that of bulk Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second and third nearest-neighbour shells. The extent of disorder in the nanocrystalline sample is comparable to that of relaxed amorphous material.

AB - The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance distribution deviates from that of bulk Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second and third nearest-neighbour shells. The extent of disorder in the nanocrystalline sample is comparable to that of relaxed amorphous material.

UR - https://www.scopus.com/pages/publications/2342446527

U2 - 10.1016/j.nimb.2004.01.004

DO - 10.1016/j.nimb.2004.01.004

M3 - Conference article

SN - 0168-583X

VL - 218

SP - 421

EP - 426

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Twelfth International Conference on Radiation

Y2 - 31 August 2003 through 5 September 2003

ER -

EXAFS characterisation of Ge nanocrystals in silica

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