EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

S. M. Kluth; B. Johannessen; P. Kluth; C. J. Glover; G. J. Foran; M. C. Ridgway

doi:10.1016/j.nimb.2005.06.060

EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

S. M. Kluth^*, B. Johannessen, P. Kluth, C. J. Glover, G. J. Foran, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga₂O₃ formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.

Original language	English
Pages (from-to)	264-267
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	238
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2005.06.060
Publication status	Published - Aug 2005
Event	Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science - Duration: 23 Aug 2004 → 25 Aug 2004

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title = "EXAFS comparison of crystalline/continuous and amorphous/porous GaSb",

abstract = "Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.",

keywords = "Amorphisation, EXAFS, GaSb, Ion implantation, Porous semiconductors",

author = "Kluth, {S. M.} and B. Johannessen and P. Kluth and Glover, {C. J.} and Foran, {G. J.} and Ridgway, {M. C.}",

year = "2005",

month = aug,

doi = "10.1016/j.nimb.2005.06.060",

language = "English",

volume = "238",

pages = "264--267",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science ; Conference date: 23-08-2004 Through 25-08-2004",

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TY - JOUR

T1 - EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

AU - Kluth, S. M.

AU - Johannessen, B.

AU - Kluth, P.

AU - Glover, C. J.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2005/8

Y1 - 2005/8

N2 - Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.

AB - Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.

KW - Amorphisation

KW - EXAFS

KW - GaSb

KW - Ion implantation

KW - Porous semiconductors

UR - http://www.scopus.com/inward/record.url?scp=25144499616&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.06.060

DO - 10.1016/j.nimb.2005.06.060

M3 - Conference article

SN - 0168-583X

VL - 238

SP - 264

EP - 267

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science

Y2 - 23 August 2004 through 25 August 2004

ER -

EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

Abstract

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