EXAFS comparison of crystalline/continuous and amorphous/porous GaSb

S. M. Kluth*, B. Johannessen, P. Kluth, C. J. Glover, G. J. Foran, M. C. Ridgway

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    8 Citations (Scopus)


    Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.

    Original languageEnglish
    Pages (from-to)264-267
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Issue number1-4
    Publication statusPublished - Aug 2005
    EventSynchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science -
    Duration: 23 Aug 200425 Aug 2004


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