Abstract
The metal-decorated nanocavities in Si were discussed using EXAFS measurements. A sample preparation methodology to enable the identification with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates was elaborated. The preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities were also presented.
Original language | English |
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Pages (from-to) | 179-184 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 199 |
DOIs | |
Publication status | Published - Jan 2003 |