EXAFS study of the structural properties of In and In plus C implanted Ge

Ruixing Feng; Felipe Kremer; D. J. Sprouster; Sahar Mirzaei; Stefan Decoster; Chris Glover; Scott Medling; Salvy P Russo; Mark C Ridgway

doi:10.1088/1742-6596/712/1/012102

EXAFS study of the structural properties of In and In plus C implanted Ge

Ruixing Feng, Felipe Kremer, D. J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris Glover, Scott Medling, Salvy P Russo, Mark C Ridgway

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (<= 0.2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration >= 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

Original language	English
Title of host publication	Journal of Physics: Conference Series
Editors	Grunwaldt J.-D.Hagel
Place of Publication	TBC
Publisher	IOP Publishing
Edition	Peer Reviewed
ISBN (Print)	9781510824515
DOIs	https://doi.org/10.1088/1742-6596/712/1/012102
Publication status	Published - 2016
Event	16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015 - Karlsruhe, Germany, Germany Duration: 1 Jan 2016 → …

Conference

Conference	16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015
Country/Territory	Germany
Period	1/01/16 → …
Other	August 23-28 2015

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10.1088/1742-6596/712/1/012102

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@inproceedings{3e70d40414ea4d02845cf5ded8937b37,

title = "EXAFS study of the structural properties of In and In plus C implanted Ge",

abstract = "The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (<= 0.2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration >= 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.",

author = "Ruixing Feng and Felipe Kremer and Sprouster, {D. J.} and Sahar Mirzaei and Stefan Decoster and Chris Glover and Scott Medling and Russo, {Salvy P} and Ridgway, {Mark C}",

year = "2016",

doi = "10.1088/1742-6596/712/1/012102",

language = "English",

isbn = "9781510824515",

editor = "{Grunwaldt J.-D.Hagel}",

booktitle = "Journal of Physics: Conference Series",

publisher = "IOP Publishing",

edition = "Peer Reviewed",

note = "16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015 ; Conference date: 01-01-2016",

}

Feng, R, Kremer, F, Sprouster, DJ, Mirzaei, S, Decoster, S, Glover, C, Medling, S, Russo, SP & Ridgway, MC 2016, EXAFS study of the structural properties of In and In plus C implanted Ge. in GJ-DH (ed.), Journal of Physics: Conference Series. Peer Reviewed edn, IOP Publishing, TBC, 16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015, Germany, 1/01/16. https://doi.org/10.1088/1742-6596/712/1/012102

TY - GEN

T1 - EXAFS study of the structural properties of In and In plus C implanted Ge

AU - Feng, Ruixing

AU - Kremer, Felipe

AU - Sprouster, D. J.

AU - Mirzaei, Sahar

AU - Decoster, Stefan

AU - Glover, Chris

AU - Medling, Scott

AU - Russo, Salvy P

AU - Ridgway, Mark C

PY - 2016

Y1 - 2016

N2 - The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (<= 0.2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration >= 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

AB - The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (<= 0.2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration >= 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

U2 - 10.1088/1742-6596/712/1/012102

DO - 10.1088/1742-6596/712/1/012102

M3 - Conference contribution

SN - 9781510824515

BT - Journal of Physics: Conference Series

A2 - null, Grunwaldt J.-D.Hagel

PB - IOP Publishing

CY - TBC

T2 - 16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015

Y2 - 1 January 2016

ER -

EXAFS study of the structural properties of In and In plus C implanted Ge

Abstract

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