Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

Teng Choon Kho, Kean Chern Fong*, Matthew Stocks, Keith McIntosh, Evan Franklin, Sieu Pheng Phang, Wensheng Liang, Andrew Blakers

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    This work presents results of a laboratory-scale interdigitated back contact (IBC) solar cell with an independently measured efficiency of 25.0%, featuring open-circuit voltage of 716 mV, short-circuit current of 43.0 mA.cm−2 and fill factor of 81.0%. Notably, the high efficiency was achieved based on significant improvements resulting from the optimised cell structure, excellent SiO2-SiNx-SiOx (ONO) surface passivation, detailed bulk lifetime management strategy and improved random pyramid texturing. Experimental details and analysis of the individual improvements over prior work are presented in-depth.

    Original languageEnglish
    Pages (from-to)1034-1044
    Number of pages11
    JournalProgress in Photovoltaics: Research and Applications
    Volume28
    Issue number10
    DOIs
    Publication statusPublished - 1 Oct 2020

    Fingerprint

    Dive into the research topics of 'Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell'. Together they form a unique fingerprint.

    Cite this