Exciton localization in inhomogeneously broadened ZnO/MgxZn 1-xO quantum wells

Almamun Ashrafi*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    Exciton localization in ZnO/MgxZn1-xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18-29 meV. The relaxation mechanism in ZnO/Mg 0.23Zn0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn 0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

    Original languageEnglish
    Article number123527
    JournalJournal of Applied Physics
    Issue number12
    Publication statusPublished - 15 Jun 2010


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