Exciton localization in inhomogeneously broadened ZnO/MgxZn 1-xO quantum wells

Almamun Ashrafi

doi:10.1063/1.3452379

Exciton localization in inhomogeneously broadened ZnO/Mg_xZn _1-xO quantum wells

Almamun Ashrafi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Exciton localization in ZnO/Mg_xZn_1-xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg_0.23Zn_0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18-29 meV. The relaxation mechanism in ZnO/Mg _0.23Zn_0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, k_BT. The band characteristics and strong exciton localization in ZnO/Mg_0.23Zn _0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

Original language	English
Article number	123527
Journal	Journal of Applied Physics
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.3452379
Publication status	Published - 15 Jun 2010

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title = "Exciton localization in inhomogeneously broadened ZnO/MgxZn 1-xO quantum wells",

abstract = "Exciton localization in ZnO/MgxZn1-xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18-29 meV. The relaxation mechanism in ZnO/Mg 0.23Zn0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn 0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.",

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N2 - Exciton localization in ZnO/MgxZn1-xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18-29 meV. The relaxation mechanism in ZnO/Mg 0.23Zn0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn 0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

AB - Exciton localization in ZnO/MgxZn1-xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18-29 meV. The relaxation mechanism in ZnO/Mg 0.23Zn0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn 0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

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Exciton localization in inhomogeneously broadened ZnO/Mg_xZn _1-xO quantum wells

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