Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Seong Il Kim*, H. H. Tan, C. Jagadish, L. V. Dao, M. Gal

*Corresponding author for this work

    Research output: Contribution to conference › Paper › peer-review

    Fingerprint

    Dive into the research topics of 'Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy'. Together they form a unique fingerprint.

    Engineering