Abstract
This article presents a study on the growth and optical properties of self-assembled InAsSb/InP nanostructures on (001) InP substrate, which are potential candidate materials for making mid-infrared lasers. The surfactant effect of Sb atoms is found to play a crucial role in the formation of flat InAsSb quantum dashes with almost identical island width no matter the change of InAsSb deposition thickness. The critical thickness for the transition from two-dimensional plane growth to three-dimensional island growth is observed to be less than two monolayer. And the photoluminescence measurements on InAsSb quantum dashes with different nominal Sb composition well demonstrate the band-gap bowing effect induced by the incorporation of Sb atoms into InAs quantum dots. The photoluminescence linewidth of InAsSb quantum dashes also present unusual temperature behavior, which can be attributed to the narrow size distribution of InAsSb quantum dashes.
| Original language | English |
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| Pages (from-to) | 1647-1654 |
| Number of pages | 8 |
| Journal | Journal of Nanoparticle Research |
| Volume | 13 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2011 |