Fabrication and photoluminescence studies of GaN nanopillars

N. Parvathala Reddy; Shagufta Naureen; Fan Wang; Kaushal Vora; Naeem Shahid; Fouad Karouta; Hark Hoe Tan; Chennupati Jagadish

doi:10.1109/COMMAD.2014.7038671

Fabrication and photoluminescence studies of GaN nanopillars

N. Parvathala Reddy^*, Shagufta Naureen, Fan Wang, Kaushal Vora, Naeem Shahid, Fouad Karouta, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	133-135
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038671
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

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10.1109/COMMAD.2014.7038671

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Reddy, N. P., Naureen, S., Wang, F., Vora, K., Shahid, N., Karouta, F., Tan, H. H., & Jagadish, C. (2014). Fabrication and photoluminescence studies of GaN nanopillars. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 133-135). Article 7038671 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038671

Reddy, N. Parvathala ; Naureen, Shagufta ; Wang, Fan et al. / Fabrication and photoluminescence studies of GaN nanopillars. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 133-135 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "Fabrication and photoluminescence studies of GaN nanopillars",

abstract = "GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.",

keywords = "Dry etching, GaN, ICP-RIE, nanopillar arrays, photoluminescence",

author = "Reddy, {N. Parvathala} and Shagufta Naureen and Fan Wang and Kaushal Vora and Naeem Shahid and Fouad Karouta and Tan, {Hark Hoe} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

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doi = "10.1109/COMMAD.2014.7038671",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Reddy, NP, Naureen, S, Wang, F, Vora, K, Shahid, N, Karouta, F, Tan, HH & Jagadish, C 2014, Fabrication and photoluminescence studies of GaN nanopillars. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038671, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 133-135, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038671

Fabrication and photoluminescence studies of GaN nanopillars. / Reddy, N. Parvathala; Naureen, Shagufta; Wang, Fan et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 133-135 7038671 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and photoluminescence studies of GaN nanopillars

AU - Reddy, N. Parvathala

AU - Naureen, Shagufta

AU - Wang, Fan

AU - Vora, Kaushal

AU - Shahid, Naeem

AU - Karouta, Fouad

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2014/2/10

Y1 - 2014/2/10

N2 - GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

AB - GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

KW - Dry etching

KW - GaN

KW - ICP-RIE

KW - nanopillar arrays

KW - photoluminescence

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U2 - 10.1109/COMMAD.2014.7038671

DO - 10.1109/COMMAD.2014.7038671

M3 - Conference contribution

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 133

EP - 135

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Reddy NP, Naureen S, Wang F, Vora K, Shahid N, Karouta F et al. Fabrication and photoluminescence studies of GaN nanopillars. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 133-135. 7038671. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038671

Fabrication and photoluminescence studies of GaN nanopillars

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