Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser-Doping

Marco Ernst; Evan Franklin; Andreas Fell; Kean Fong; Daniel Walter; Er Chien Wang; Teng Kho; Andrew Blakers

doi:10.1002/pssa.201700318

Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser-Doping

Marco Ernst^*, Evan Franklin, Andreas Fell, Kean Fong, Daniel Walter, Er Chien Wang, Teng Kho, Andrew Blakers

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all-laser-doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser-based approach with localized emitter and back-surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated.

Original language	English
Article number	1700318
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201700318
Publication status	Published - Nov 2017

Access to Document

10.1002/pssa.201700318

Cite this

@article{d1b9730e3ece43b19e96976293a7d069,

title = "Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser-Doping",

abstract = "Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all-laser-doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser-based approach with localized emitter and back-surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated.",

keywords = "interdigitated back contacts, laser ablation, laser doping, silicon, solar cells",

author = "Marco Ernst and Evan Franklin and Andreas Fell and Kean Fong and Daniel Walter and Wang, {Er Chien} and Teng Kho and Andrew Blakers",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2017",

month = nov,

doi = "10.1002/pssa.201700318",

language = "English",

volume = "214",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag GmbH",

number = "11",

}

TY - JOUR

T1 - Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser-Doping

AU - Ernst, Marco

AU - Franklin, Evan

AU - Fell, Andreas

AU - Fong, Kean

AU - Walter, Daniel

AU - Wang, Er Chien

AU - Kho, Teng

AU - Blakers, Andrew

PY - 2017/11

Y1 - 2017/11

N2 - Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all-laser-doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser-based approach with localized emitter and back-surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated.

AB - Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all-laser-doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser-based approach with localized emitter and back-surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated.

KW - interdigitated back contacts

KW - laser ablation

KW - laser doping

KW - silicon

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=85033503764&partnerID=8YFLogxK

U2 - 10.1002/pssa.201700318

DO - 10.1002/pssa.201700318

M3 - Article

SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 11

M1 - 1700318

ER -

Fabrication of a 22.8% Efficient Back Contact Solar Cell With Localized Laser-Doping

Abstract

Access to Document

Other files and links

Fingerprint

Cite this