Fabrication of blue LEDs on big chips

Zongyou Yin; Densen Cao; Jingzhi Yin; Yuantao Zhang; Zhengting Li; Guotong Du; Shuren Yang

Fabrication of blue LEDs on big chips

Zongyou Yin^*, Densen Cao, Jingzhi Yin, Yuantao Zhang, Zhengting Li, Guotong Du, Shuren Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The GaN based epitaxial wafer is fabricated on big 1 mm x l mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m² and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.

Original language	English
Pages (from-to)	220-221
Number of pages	2
Journal	Chinese Optics Letters
Volume	1
Issue number	4
Publication status	Published - Apr 2003
Externally published	Yes

Cite this

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title = "Fabrication of blue LEDs on big chips",

abstract = "The GaN based epitaxial wafer is fabricated on big 1 mm x l mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m2 and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.",

author = "Zongyou Yin and Densen Cao and Jingzhi Yin and Yuantao Zhang and Zhengting Li and Guotong Du and Shuren Yang",

year = "2003",

month = apr,

language = "English",

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journal = "Chinese Optics Letters",

issn = "1671-7694",

publisher = "Optica Publishing Group (formerly OSA)",

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T1 - Fabrication of blue LEDs on big chips

AU - Yin, Zongyou

AU - Cao, Densen

AU - Yin, Jingzhi

AU - Zhang, Yuantao

AU - Li, Zhengting

AU - Du, Guotong

AU - Yang, Shuren

PY - 2003/4

Y1 - 2003/4

N2 - The GaN based epitaxial wafer is fabricated on big 1 mm x l mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m2 and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.

AB - The GaN based epitaxial wafer is fabricated on big 1 mm x l mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m2 and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.

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M3 - Article

SN - 1671-7694

VL - 1

SP - 220

EP - 221

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - 4

ER -

Fabrication of blue LEDs on big chips

Abstract

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