Fabrication of coaxial nanowire heterostructures: SiOx nanowires with conformal TiO 2 coatings

Avi Shalav*, Dinesh K. Venkatachalam, Robert G. Elliman

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Silica nanowires, grown via the active oxidation of a silicon substrate, have been coated with TiO 2 using two coating methods: solution-based deposition of Ti-alkoxides and atomic layer deposition. Analysis of as-deposited and annealed films shows that it is possible to produce stable conformal coatings of either the anatase or rutile phases of TiO 2 on nanowires with diameters greater than 100 nm when annealed between 500-600°C and 800-900°C, respectively, with annealing at higher temperatures (1050°C) producing coatings with a highly facetted rutile morphology. The efficacy of the process is shown to depend on nanowire diameter, with nanowires having diameters less than about 100 nm fusing together during solution-based coating and decomposing during TiO 2 atomic layer deposition. The use of a suitable buffer layer is shown to be an effective means of minimizing nanowire decomposition. Finally, annealing coated nanowires under active oxidation conditions (1100°C) is shown to be an effective technique for depositing additional conformal SiO x coatings, thereby providing a means of fabricating multi-layered coaxial nanostructures.

    Original languageEnglish
    Pages (from-to)749-754
    Number of pages6
    JournalApplied Physics A: Materials Science and Processing
    Volume107
    Issue number3
    DOIs
    Publication statusPublished - Jun 2012

    Fingerprint

    Dive into the research topics of 'Fabrication of coaxial nanowire heterostructures: SiOx nanowires with conformal TiO 2 coatings'. Together they form a unique fingerprint.

    Cite this