Fabrication of dual-type nanowire arrays on a single substrate

Joona Pekko P. Kakko; Tuomas Haggrén; Veer Dhaka; Teppo Huhtio; Antti Peltonen; Hua Jiang; Esko Kauppinen; Harri Lipsanen

doi:10.1021/nl504308x

Fabrication of dual-type nanowire arrays on a single substrate

Joona Pekko P. Kakko^*
, Tuomas Haggrén
, Veer Dhaka
, Teppo Huhtio
, Antti Peltonen
, Hua Jiang
, Esko Kauppinen
, Harri Lipsanen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A novel method for fabricating dual-type nanowire (NW) arrays is presented. Two growth steps, selective-area epitaxy (SAE) in the first step and vapor-liquid-solid (VLS) in the second step, are used to grow two types of NWs on the same GaAs substrate. Different precursors can be used for the growth steps, resulting in sophisticated compositional control, as demonstrated for side-by-side grown GaAs and InP NWs. It was found that parasitic growth occurs on the NWs already present on the substrate during the second growth step and that the SAE NWs shadow the growth of the VLS NWs. Optical reflectance measurements revealed the dual-type array having improved light trapping properties compared to single-type arrays. Dual-type NW arrays could be practical for thermoelectric generation, photovoltaics and sensing where composition control of side-by-side NWs and complex configurations are beneficial.

Original language	English
Pages (from-to)	1679-1683
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1021/nl504308x
Publication status	Published - 11 Mar 2015
Externally published	Yes

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title = "Fabrication of dual-type nanowire arrays on a single substrate",

abstract = "A novel method for fabricating dual-type nanowire (NW) arrays is presented. Two growth steps, selective-area epitaxy (SAE) in the first step and vapor-liquid-solid (VLS) in the second step, are used to grow two types of NWs on the same GaAs substrate. Different precursors can be used for the growth steps, resulting in sophisticated compositional control, as demonstrated for side-by-side grown GaAs and InP NWs. It was found that parasitic growth occurs on the NWs already present on the substrate during the second growth step and that the SAE NWs shadow the growth of the VLS NWs. Optical reflectance measurements revealed the dual-type array having improved light trapping properties compared to single-type arrays. Dual-type NW arrays could be practical for thermoelectric generation, photovoltaics and sensing where composition control of side-by-side NWs and complex configurations are beneficial.",

keywords = "dual-type, III-V, metallo-organic vapor phase epitaxy, nanowire, selective-area epitaxy, vapor-liquid-solid",

author = "Kakko, \{Joona Pekko P.\} and Tuomas Haggr{\'e}n and Veer Dhaka and Teppo Huhtio and Antti Peltonen and Hua Jiang and Esko Kauppinen and Harri Lipsanen",

note = "{\textcopyright}2015 The authors ",

year = "2015",

month = mar,

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doi = "10.1021/nl504308x",

language = "English",

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journal = "Nano Letters",

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TY - JOUR

T1 - Fabrication of dual-type nanowire arrays on a single substrate

AU - Kakko, Joona Pekko P.

AU - Haggrén, Tuomas

AU - Dhaka, Veer

AU - Huhtio, Teppo

AU - Peltonen, Antti

AU - Jiang, Hua

AU - Kauppinen, Esko

AU - Lipsanen, Harri

PY - 2015/3/11

Y1 - 2015/3/11

N2 - A novel method for fabricating dual-type nanowire (NW) arrays is presented. Two growth steps, selective-area epitaxy (SAE) in the first step and vapor-liquid-solid (VLS) in the second step, are used to grow two types of NWs on the same GaAs substrate. Different precursors can be used for the growth steps, resulting in sophisticated compositional control, as demonstrated for side-by-side grown GaAs and InP NWs. It was found that parasitic growth occurs on the NWs already present on the substrate during the second growth step and that the SAE NWs shadow the growth of the VLS NWs. Optical reflectance measurements revealed the dual-type array having improved light trapping properties compared to single-type arrays. Dual-type NW arrays could be practical for thermoelectric generation, photovoltaics and sensing where composition control of side-by-side NWs and complex configurations are beneficial.

AB - A novel method for fabricating dual-type nanowire (NW) arrays is presented. Two growth steps, selective-area epitaxy (SAE) in the first step and vapor-liquid-solid (VLS) in the second step, are used to grow two types of NWs on the same GaAs substrate. Different precursors can be used for the growth steps, resulting in sophisticated compositional control, as demonstrated for side-by-side grown GaAs and InP NWs. It was found that parasitic growth occurs on the NWs already present on the substrate during the second growth step and that the SAE NWs shadow the growth of the VLS NWs. Optical reflectance measurements revealed the dual-type array having improved light trapping properties compared to single-type arrays. Dual-type NW arrays could be practical for thermoelectric generation, photovoltaics and sensing where composition control of side-by-side NWs and complex configurations are beneficial.

KW - dual-type

KW - III-V

KW - metallo-organic vapor phase epitaxy

KW - nanowire

KW - selective-area epitaxy

KW - vapor-liquid-solid

UR - https://www.scopus.com/pages/publications/84924529859

U2 - 10.1021/nl504308x

DO - 10.1021/nl504308x

M3 - Article

AN - SCOPUS:84924529859

SN - 1530-6984

VL - 15

SP - 1679

EP - 1683

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Fabrication of dual-type nanowire arrays on a single substrate

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