Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

Juqing Liu; Zongyou Yin; Xiehong Cao; Fei Zhao; Lianhui Wang; Wei Huang; Hua Zhang

doi:10.1002/adma.201203349

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

Juqing Liu
, Zongyou Yin
, Xiehong Cao
, Fei Zhao
, Lianhui Wang
, Wei Huang
, Hua Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

215 Citations (Scopus)

Abstract

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

Original language	English
Pages (from-to)	233-238
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	2
DOIs	https://doi.org/10.1002/adma.201203349
Publication status	Published - 11 Jan 2013
Externally published	Yes

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title = "Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices",

abstract = "A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.",

keywords = "flexible, graphene, memory device, reduced graphene oxide, solution process",

author = "Juqing Liu and Zongyou Yin and Xiehong Cao and Fei Zhao and Lianhui Wang and Wei Huang and Hua Zhang",

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AU - Liu, Juqing

AU - Yin, Zongyou

AU - Cao, Xiehong

AU - Zhao, Fei

AU - Wang, Lianhui

AU - Huang, Wei

AU - Zhang, Hua

PY - 2013/1/11

Y1 - 2013/1/11

N2 - A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

AB - A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

KW - flexible

KW - graphene

KW - memory device

KW - reduced graphene oxide

KW - solution process

UR - https://www.scopus.com/pages/publications/84872112759

U2 - 10.1002/adma.201203349

DO - 10.1002/adma.201203349

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VL - 25

SP - 233

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JO - Advanced Materials

JF - Advanced Materials

IS - 2

ER -

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

Abstract

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