Abstract
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
| Original language | English |
|---|---|
| Pages (from-to) | 233-238 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 11 Jan 2013 |
| Externally published | Yes |