TY - JOUR
T1 - Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications
AU - He, Qiyuan
AU - Zeng, Zhiyuan
AU - Yin, Zongyou
AU - Li, Hai
AU - Wu, Shixin
AU - Huang, Xiao
AU - Zhang, Hua
PY - 2012/10/8
Y1 - 2012/10/8
N2 - By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS2 thin-film into the electronic sensor promises its potential application in various electronic devices. By combining two kinds of solution-processable 2D materials, a flexible transistor array is fabricated in which a MoS2 thin film is used as the active channel and a reduced graphene oxide (rGO) film is used as the drain and source electrodes. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times.
AB - By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS2 thin-film into the electronic sensor promises its potential application in various electronic devices. By combining two kinds of solution-processable 2D materials, a flexible transistor array is fabricated in which a MoS2 thin film is used as the active channel and a reduced graphene oxide (rGO) film is used as the drain and source electrodes. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times.
KW - MoS
KW - flexible electronics
KW - gas sensors
KW - reduced graphene oxides
KW - thin-film transistors
UR - http://www.scopus.com/inward/record.url?scp=84867093360&partnerID=8YFLogxK
U2 - 10.1002/smll.201201224
DO - 10.1002/smll.201201224
M3 - Article
SN - 1613-6810
VL - 8
SP - 2994
EP - 2999
JO - Small
JF - Small
IS - 19
ER -