Fabrication of high-speed electronic devices of ion-beam synthesis of Ge XSi 1-X strained layers

R. G. Elliman; H. Jiang; W. C. Wong; P. Kringhoj

Fabrication of high-speed electronic devices of ion-beam synthesis of Ge _XSi _1-X strained layers

R. G. Elliman^*, H. Jiang, W. C. Wong, P. Kringhoj

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Ge _XSi _1-X strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improved their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	438
Publication status	Published - 1996
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

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@article{1778584b85034529b52d0c17410303b4,

title = "Fabrication of high-speed electronic devices of ion-beam synthesis of Ge XSi 1-X strained layers",

abstract = "Ge XSi 1-X strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improved their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.",

author = "Elliman, {R. G.} and H. Jiang and Wong, {W. C.} and P. Kringhoj",

year = "1996",

language = "English",

volume = "438",

pages = "217--222",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Fabrication of high-speed electronic devices of ion-beam synthesis of Ge XSi 1-X strained layers

AU - Elliman, R. G.

AU - Jiang, H.

AU - Wong, W. C.

AU - Kringhoj, P.

PY - 1996

Y1 - 1996

N2 - Ge XSi 1-X strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improved their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

AB - Ge XSi 1-X strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improved their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

UR - http://www.scopus.com/inward/record.url?scp=0030372449&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030372449

SN - 0272-9172

VL - 438

SP - 217

EP - 222

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Fabrication of high-speed electronic devices of ion-beam synthesis of Ge _XSi _1-X strained layers

Abstract

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