Fabrication of single- and multilayer MoS 2 film-based field-effect transistors for sensing NO at room temperature

Hai Li, Zongyou Yin, Qiyuan He, Hong Li, Xiao Huang, Gang Lu, Derrick Wen Hui Fam, Alfred Iing Yoong Tok, Qing Zhang, Hua Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1427 Citations (Scopus)

Abstract

Single- and multilayer MoS 2 films are deposited onto Si/SiO 2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS 2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS 2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalSmall
Volume8
Issue number1
DOIs
Publication statusPublished - 9 Jan 2012
Externally publishedYes

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