Abstract
Single- and multilayer MoS 2 films are deposited onto Si/SiO 2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS 2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS 2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
Original language | English |
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Pages (from-to) | 63-67 |
Number of pages | 5 |
Journal | Small |
Volume | 8 |
Issue number | 1 |
DOIs | |
Publication status | Published - 9 Jan 2012 |
Externally published | Yes |