Fabrication of solar cells using the epilift technique

M. J. Stocks*, K. J. Weber, A. W. Blakers

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (Scopus)

    Abstract

    The Epilift technique allows the growth and detachment of good quality, single crystal silicon films on silicon substrates. Since the substrates only act as a growth template, they can be re-used, offering the potential for substantial cost reductions. However, the processing of solar cells on Epilift layers introduces significant challenges as a result of the fact that the layers are thin and perforated. We have obtained good results by performing most of the processing prior to detachment of the layer from the substrate. An interdigitated rear contact design created by laser patterning allows the specific features of epilift layers to be optimally exploited. Individual 1cm2 cells with a SiO2 antireflection coating have displayed efficiencies in excess of 13%, while a 50cm2 mini-module has displayed an efficiency of 10.9%.

    Original languageEnglish
    Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
    Pages1268-1271
    Number of pages4
    Publication statusPublished - 2003
    EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
    Duration: 11 May 200318 May 2003

    Publication series

    NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
    VolumeB

    Conference

    ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    Country/TerritoryJapan
    CityOsaka
    Period11/05/0318/05/03

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