Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

C. J. Dedman; E. H. Roberts; S. T. Gibson; B. R. Lewis

doi:10.1063/1.1389488

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

C. J. Dedman^*, E. H. Roberts, S. T. Gibson, B. R. Lewis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

Original language	English
Pages (from-to)	3718-3720
Number of pages	3
Journal	Review of Scientific Instruments
Volume	72
Issue number	9
DOIs	https://doi.org/10.1063/1.1389488
Publication status	Published - Sept 2001

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title = "Fast 1 kV metal-oxide-semiconductor field-effect transistor switch",

abstract = "A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.",

author = "Dedman, {C. J.} and Roberts, {E. H.} and Gibson, {S. T.} and Lewis, {B. R.}",

year = "2001",

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AU - Roberts, E. H.

AU - Gibson, S. T.

AU - Lewis, B. R.

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N2 - A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

AB - A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

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U2 - 10.1063/1.1389488

DO - 10.1063/1.1389488

M3 - Article

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EP - 3720

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 9

ER -

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

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