Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

C. J. Dedman; E. H. Roberts; S. T. Gibson; B. R. Lewis

doi:10.1063/1.1389488

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

C. J. Dedman^*, E. H. Roberts, S. T. Gibson, B. R. Lewis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

Original language	English
Pages (from-to)	3718-3720
Number of pages	3
Journal	Review of Scientific Instruments
Volume	72
Issue number	9
DOIs	https://doi.org/10.1063/1.1389488
Publication status	Published - Sept 2001

Access to Document

10.1063/1.1389488

Cite this

@article{ad1152d4ef8c400488d376db22c63360,

title = "Fast 1 kV metal-oxide-semiconductor field-effect transistor switch",

abstract = "A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.",

author = "Dedman, \{C. J.\} and Roberts, \{E. H.\} and Gibson, \{S. T.\} and Lewis, \{B. R.\}",

year = "2001",

month = sep,

doi = "10.1063/1.1389488",

language = "English",

volume = "72",

pages = "3718--3720",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

AU - Dedman, C. J.

AU - Roberts, E. H.

AU - Gibson, S. T.

AU - Lewis, B. R.

PY - 2001/9

Y1 - 2001/9

N2 - A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

AB - A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

UR - http://www.scopus.com/inward/record.url?scp=0035465928&partnerID=8YFLogxK

U2 - 10.1063/1.1389488

DO - 10.1063/1.1389488

M3 - Article

SN - 0034-6748

VL - 72

SP - 3718

EP - 3720

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 9

ER -

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Abstract

Access to Document

Other files and links

Fingerprint

Cite this