Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films

Junjian Li; Guoxiang Wang; Jun J. Li; Xiang Shen; Yimin Chen; Rongping Wang; Tiefeng Xu; Qiuhua Nie; Shixun Dai; Yegang Lu; Xunsi Wang

doi:10.1039/c4ce00547c

Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films

Junjian Li, Guoxiang Wang, Jun J. Li, Xiang Shen^*, Yimin Chen, Rongping Wang, Tiefeng Xu, Qiuhua Nie, Shixun Dai, Yegang Lu, Xunsi Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We prepared Mg-doped Sb₂Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb₂Te. Compared to Ge ₂Sb₂Te₅, the optimal composition of Mg _21.5(Sb₂Te)_78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state at ~121 °C for ten years), indicating improved amorphous state stability due to the formation of Mg-Sb bonds. A reversible, repetitive optical switching behavior was realized in the Mg_21.5(Sb₂Te) _78.5 film, with a fast crystallization speed of 52 ns and a low amorphization power of 35 mW. This journal is

Original language	English
Pages (from-to)	7401-7405
Number of pages	5
Journal	CrystEngComm
Volume	16
Issue number	32
DOIs	https://doi.org/10.1039/c4ce00547c
Publication status	Published - 28 Aug 2014

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title = "Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films",

abstract = "We prepared Mg-doped Sb2Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb2Te. Compared to Ge 2Sb2Te5, the optimal composition of Mg 21.5(Sb2Te)78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state at ~121 °C for ten years), indicating improved amorphous state stability due to the formation of Mg-Sb bonds. A reversible, repetitive optical switching behavior was realized in the Mg21.5(Sb2Te) 78.5 film, with a fast crystallization speed of 52 ns and a low amorphization power of 35 mW. This journal is",

author = "Junjian Li and Guoxiang Wang and Li, {Jun J.} and Xiang Shen and Yimin Chen and Rongping Wang and Tiefeng Xu and Qiuhua Nie and Shixun Dai and Yegang Lu and Xunsi Wang",

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doi = "10.1039/c4ce00547c",

language = "English",

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T1 - Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films

AU - Li, Junjian

AU - Wang, Guoxiang

AU - Li, Jun J.

AU - Shen, Xiang

AU - Chen, Yimin

AU - Wang, Rongping

AU - Xu, Tiefeng

AU - Nie, Qiuhua

AU - Dai, Shixun

AU - Lu, Yegang

AU - Wang, Xunsi

PY - 2014/8/28

Y1 - 2014/8/28

N2 - We prepared Mg-doped Sb2Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb2Te. Compared to Ge 2Sb2Te5, the optimal composition of Mg 21.5(Sb2Te)78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state at ~121 °C for ten years), indicating improved amorphous state stability due to the formation of Mg-Sb bonds. A reversible, repetitive optical switching behavior was realized in the Mg21.5(Sb2Te) 78.5 film, with a fast crystallization speed of 52 ns and a low amorphization power of 35 mW. This journal is

AB - We prepared Mg-doped Sb2Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb2Te. Compared to Ge 2Sb2Te5, the optimal composition of Mg 21.5(Sb2Te)78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state at ~121 °C for ten years), indicating improved amorphous state stability due to the formation of Mg-Sb bonds. A reversible, repetitive optical switching behavior was realized in the Mg21.5(Sb2Te) 78.5 film, with a fast crystallization speed of 52 ns and a low amorphization power of 35 mW. This journal is

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U2 - 10.1039/c4ce00547c

DO - 10.1039/c4ce00547c

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VL - 16

SP - 7401

EP - 7405

JO - CrystEngComm

JF - CrystEngComm

IS - 32

ER -

Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films

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